Resume

Lisa Parechanian Allen, Ph.D.

EDUCATION:

1982-1987, LAWRENCE BERKELEY LABORATORY, University of California
Ph.D. in Materials Science and Engineering / Physics minor

· Gallium Arsenide (GaAs) molecular beam epitaxy (MBE) research at Lawrence Berkeley Laboratory / Univ. of California, resulting in Doctorate thesis entitled, “Suppression of Facets on (110) GaAs/GaAs grown by MBE”·

· Established new convergent beam electron microscope imaging technique for calculation of Ga vs. As rich planes

· Cooperative research program with Hewlett-Packard Laboratory to establish improved wafer handling and temperature measurement for GaAs MBE

1978-1982, MASSACHUSETTS INSTITUTE OF TECHNOLOGY, Cambridge, MA
S.B. and M.S. in Physical Metallurgy

· Bell Laboratories Co-op program resulting in a MS thesis entitled, “Growth and characterization of Silicon molecular beam epitaxy material”. This work incorporated the construction of a 4keV simultaneous implant dopant source and controls for in-situ Si MBE processing.

· Bachelor’s thesis research program with MIT Lincoln Laboratory, resulting in growth of low pressure CVD silicon to establish amorphous transition conditions

AWARDS / COMMITTEES / SCHOLARSHIPS:
2013: Mass. Institute of Tech., George B Morgan ’20 Award, devoted service to the Educational Council and the Institute
1990-2012: Mass. Institute of Tech. Educational Council (Regional Vice-chair)
2000: American Vacuum Society, Vacuum Metallurgy Division, R.F. Bunshah
Best Paper Award from the Int’l. Conf. On Metallurgical Coatings & Thin Films
1998: IEEE Nuclear & Space Radiation Effects Conference, Exec. Committee
1997: General Chair, IEEE International SOI Conference
1993-2000: IEEE International SOI Conference: Technical Committee member, executive committee member, technical program chair, advisory board
1997: The Metallurgical Society Award for Continuing Education
1992-1996: Semiconductor Research Consortium, MIT program mentor
1992-1997: The Metallurgical Society, Electronic/Photonic/Magnetic Council
1991-1996: The Metallurgical Society, Student Affairs Committee member
1988: The Metallurgical Soc. International Graduate Student Paper Award
1987: Materials Research Society, International Graduate Student Award
1985: JEOL Transmission Electron Microscopy International Scholarship
1982-1983: University of California, Materials Department Scholarship
1977-1981: UniRoyal, Inc., 4-year MIT scholarship and Century Brass MIT Metallurgy
scholarship

PATENTS:
Patent #6,537,606, “Gas Cluster Ion Beam Smoothing of Ultra-thin and multilayered films”, inventors Lisa P. Allen and David B. Fenner

Patent #5,120,509 “Method and Apparatus for Reducing Defects in SOI Structures”, inventors, Lisa P. Allen, Thomas P. Ford, Paul M. Zavracky

Patent #5,021,119 “SOI Slip Reduction”, inventors, Paul M. Zavracky, Lisa P. Allen, J. C.C. Fan

Patent #4,944,835 “Seeding Process in Zone Melt Recrystallization”, inventors Lisa P. Allen, Duy Phac Vu, Michael W. Batty, Richard Morrison, Paul M. Zavracky.

Patent #4,885,052 “Zone Melting Recrystallization Process”, inventors: John C.C. Fan, Paul M. Zavracky, Lisa P. Allen Jagdish Narayan, Duy-Phac Vu, and Ngwe Khine Cheong.

INVITED UNIVERSITY LECTURES:
Portland Area Semiconductor Seminar Series, Portland State University, “Gas Cluster Ion Beam Smoothing and Modification of Surfaces”, May 4, 2001.

University of Arizona, Tempe, AZ, Dept. of Materials Engineering, “Formation and Characterization of SIMOX SOI”, November 1994.

Massachusetts Institute of Technology, Cambridge, MA, Dept. of Materials Science and Engineering, “Materials Characterization of SIMOX SOI”, April 1993.

University of Massachusetts, Springfield, MA, Dept. of Electrical Engineering, “Silicon the Semiconductor”, May, 1991.

University of California at Berkeley, “Materials Characterization of Isolated Silicon Epitaxy”, April, 1989.

University of Florida, Gainsville, FL, Dept. of Materials Science, “Silicon-on-Insulator Technology”, January 1988.

University of Washington, Seattle, WA, Dept. of Aeronautical Engineering, “Growth of Crystals in Space”, March 1987.

THESIS COMMITTEES and/or ACTIVE GUIDANCE:

Ph.D. Thesis work:
S. Vangala, 2005-present, University of Massachusetts at Lowell, InSb and GaSb Optoelectronics study, Ph.D. in progress, Thesis Advisor Prof. W. Goodhue

K. Krishnaswami, 2002-2006 University of Massachusetts at Lowell, “GaSb molecular beam epitaxy and surface analysis”, Thesis Advisor Prof. W. Goodhue

J.H. Yap Krska, February 1997, Massachusetts Institute of Technology, “SIMOX Buried Oxide Conduction mechanisms”, Thesis Advisor Prof. J. Chung

R. Datta, 1996, University of Florida, “Improvement of SIMOX SOI thin films”, Thesis Advisor, Prof. Kevin Jones

J.D. Lipman, 1990, Tufts University , “A Thermal Analysis of the Zone-Melting Recrystallization of Thin Si Films, Thesis Advisor: Prof. Ioannis Miaolis

M.S. Thesis work:
X. Li, June 2002, University of Massachusetts at Lowell , “Modification of GaSb Surfaces using Gas Cluster Ion Beam Technology”, Advisor: Prof. C. Sung

Carston Jacobs, December 1994, Gerhard Mercator Universitaet, “Automatic Counting of Defects for SOI Technology using Neural Networks”, Advisor: Prof. Vogt

PROFESSIONAL MEMBERSHIP:

The Materials, Minerals, and Metallurgical Society (TMS) and Senior Member, Institute of Electrical and Electronic Engineers (IEEE), Massachusetts Institute of Technology Educational Council (MITEC).

PUBLICATIONS AND PRESENTATIONS:
Over 135 technical conference and peer-reviewed journal publications that include:

Journal of Applied Physics Applied Physics Letters
Journal of Electronic Materials IEEE Trans. Superconductivity
Journal of Material Science J. Vacuum Science & Technology
Nuclear Inst. & Meth. in Phys. B Materials Science & Engineering B
Surface and Coatings Tech. IEEE Trans. Nuclear Science
Electronics Letters Microelectronics Engineering
Solid State Electronics Ultramicroscopy
Journal of Crystal Growth Applied Surface Science
Journal Physica C Journal of the Electrochem. Soc.

Publication List:
L.P. Allen, J.P. Flint, G. Meshew, J. Trevethan, G. Dallas, D. Bakken, A. Khoshakhlagh, C. J. Hill, “Manufacturing of 100mm diameter GaSb substrates for advanced space based applications”, Invited Paper, 2012 OPTO SPIE Photonics West, Quantum Sensing and Nanophotonic Devices (OE114), 21-26 January, (San Francisco, CA),
#PW12O-OE114-13. UNCLASSIFIED

L.P. Allen, J.P. Flint, G. Meshew, J. Trevethan, M. Furlong, B.Martinez, A. Mowbray, “Surface Chemistry Improvement of 100mm GaSb for advanced space base applications”, Invited Paper, 2012 OPTO SPIE Photonics West, Quantum Sensing and Nanophotonic Devices (OE114), 21-26 January, (San Francisco, CA), #PW12O-OE114-12. UNCLASSIFIED

J.P. Flint, L.P. Allen, G. Meshew, G. Dallas, J. Trevethan, “Growth and Characterization of Next Generation GaSb Substrates”, 6.1A International Workshop, (Arizona State University, November 8, 2011), oral presentation. (UNCLASSIFIED)

L.P. Allen, P. Flint, G. Dallas, D. Bakken, J. Trevethan, “100mm GaSb Substrates from Galaxy, Part 4″, Missile Defense Agency 2011 FastFPA Review, (Arcadia, CA, June 2011). UNCLASSIFIED.

L.P. Allen, P.J. Flint, G.Meshew, G. Dallas, D. Bakken, G. J. Brown, A. Khoshakhlagh, C. J. Hill, “100mm diameter GaSb substrates with extended IR wavelength for advanced space-based applications”, Proc. of the SPIE Defense, Security, and Sensing, Infrared Technology and Applications XXXVII, (25-29 April 2011, Orlando, Florida, USA), paper 8012-124 UNCLASSIFIED

P. Flint, L.P. Allen, G. Dallas, D. Bakken, K. Blanchat, “100mm GaSb Substrates from Galaxy, Part 3”, Missile Defense Agency 20119 FastFPA Review, (Logan, UT, February 2011). UNCLASSIFIED.

L.P. Allen, P. Flint, G. Dallas, D. Bakken, K. Blanchat, “100mm GaSb Substrates from Galaxy, Part 2”, Missile Defense Agency 2010 FastFPA Review, (Malibu, CA, September 2010). UNCLASSIFIED.

L.P. Allen, P. Flint, G. Dallas, D. Bakken, K. Blanchat, “100mm GaSb Substrates from Galaxy, Part 1”, Missile Defense Agency 2009 FastFPA Review, (Hudson, NH, October 2009). UNCLASSIFIED.

P. Flint, L.P. Allen, G. Dallas, D.Bakken, K. Blanchat, S.R. Vangala, W.D.Goodhue, D. Bliss, H. Dauplais, “CMP Process Comparison for 150mm larger area InSb (111)B focal plane array substrates”, SPIE Europe’s International Symposium on Security & Defence, Vol. 7487 “Optical Materials in Defence Systems Technology”, (31 August – 3 September 2009, Berlin, Germany), Paper Number: 7487-11.

L.P. Allen, P. Flint, G. Dallas, D. Bakken, K. Blanchat, G. J. Brown, S.R. Vangala, W.D.Goodhue, and K. Krishnaswami, “GaSb substrates with extended IR wavelength for advanced space based applications”, 2009 SPIE Defense, Security, and Sensing Conference, (13-17 April 2009), Infrared Technology and Applications XXXV, paper 7298-136.

K. Krishnaswami, S. Vangala, H. Dauplais, L.P. Allen, G. Dallas, D. Bakken, W. Goodhue, “Molecular Beam Epitaxy on Gas Cluster Ion Beam Prepared GaSb Substrates: Towards Improved Surfaces and Interfaces”, J. Crystal Growth, Vol. 310, p. 1619-1626, 2008.

S.R. Vangala, H. Dauplaise, L.P. Allen, G. Dallas, C. Santeufemio, C. Lynch, K. Vaccaro, D.Bliss, and W.D. Goodhue, “Atomic hydrogen cleaning of epi-ready InSb(100), InSb(111)B, and GCIB processed InSb(111)B surfaces”, Proceedings of the 2007 International Conference on Compound Semiconductor Manufacturing Technology, (May 14-17, 2007 Austin, TX), in print.

L.P. Allen, G. Dallas, K. Blanchet, S.R. Vangala, C. Santeufemio, W.D. Goodhue, R. Roehl, C.E. Jones, J. Barton, B. Zide, V. Difilippo, and K.S.Jones, “Successful MWIR FPA fabrication using gas cluster ion beam InSb surface finishing”, 2007 SPIE Defense & Security Symposium, (April 2007, Orlando), IR Sensors and Engineering, [paper 6542-131.

S.R. Vangala, X. Qian, M. Grzesik, C. Santeufemio, L.P. Allen, G. Dallas,
H. Daupliase, K. Vaccaro, S.Q. Wan, D. Bliss, and W.D. Goodhue, “MBE growth and morphological studies of homoepitaxial layers on CMP processed InSb(100) and InSb(111)B substrates”, J. Vac. Sci. Technol. B, 24(3), May/Jun 2006 1634-1638 and The North American Molecular Beam Epitaxy Conference 2005 (NAMBE), Sept. 11-14, 2005, San Diego, CA.

S.R. Vangala, L.P. Allen, Vincent DiFilippo, C. Santeufemio, Jin Li, Xifeng Qian, Yumi Park, B. Zhu, K. Krishnaswami, G. Dallas, D. Bliss, H. Dauplaise, K.S. Jones, W.D Goodhue, “HBr-Based Gas Cluster Ion Beam Smoothing as a Final Polish for the Production of MBE Epi-Ready GaSb Wafers”, Proc. 2005 International Conference on Compound Semiconductor Manufacturing Technology (GaAs Mantech), April 11-19, 2005 New Orleans, Louisiana. Paper No 14.24, p. 335.

K. Krishnaswami, D.B. Fenner, S.R. Vangala, C. Santeufemio, M. Grzesik, L.P. Allen, G. Dallas, W.D. Goodhue, “Roughness Analysis of Epi Surfaces Grown on Ion-Beam Processed GaSb Substrates”, Mat. Res. Symp. Proc. Vol. 829, Session B, paper 6.3, 2005 (MRS Fall Meeting, Boston, Nov. 29 2004).

K. Krishnaswami, S.R. Vangala, B. Zhu, W.D. Goodhue, L.P. Allen, C.Santeufemio, X. Liu, C. Ospina, J. Whitten, C. Sung, H. Dauplaise, D. Bliss, G. Dallas, D. Bakken, K.S. Jones, “Epitaxial growth on gas cluster ion beam processed GaSb substrates using molecular beam epitaxy”, J. Vac. Sci. Technol. B 22(3), May/June 2004, pp 1455-1459.

M.S. Hatzistergos, H. Efstathiadis, J.L. Reeves, V. Selvamanickam, L.P. Allen, E. Lifshin, and P. Haldar, “Microstructural and compositional analysis of YBa2Cu3O7-d films grown by MOCVD before and after GCIB smoothing”, J. Physica C: Superconductivity, Vol. 405, 15June 2004, 179-186.

K. Krishnaswami, S. R.Vangala, B. Krejca, L.P. Allen, C. Santeufemio, H. Dauplaise, X. Liu, J. Whitten, M. Ospina, C. Sung, D. Bliss, and W.D. Goodhue, “Gas Cluster Ion Beam Processing of GaSb and InSb Surfaces”, Mat. Res. Symp. R, Proc. Vol. 786, R10.7, 2004.

K. Krishnaswami, B. Krejca, S. Vangala, M.C. Ospina, C. Sung, L.P. Allen, C. Santeufemio, D. Bliss, and W.D Goodhue, “Determination of nano fluctuations in surface oxides of GaSb with Br-IBAE,” Mat. Res. Symp., Vol. 786, 329-334 (2004)

K. Krishnaswami, W. Goodhue, L. Allen, C. Santeufemio, X. Liu, M. Osipina, B. Zhu, C. Sung, H. Dauplaise, D. Bliss, and K. Jones, “Epitaxial Growth on Gas Cluster Ion Beam Processed GaSb Substrates Using Molecular Beam Epitaxy,” presented at North American Molecular Beam Epitaxy (NAMBE) Conference (Colorado, November 2003).

Z. Insepov, L.P. Allen, C. Santeufemio, K.S. Jones, and I. Yamada, “Computer Modeling and Electron Microscopy of Silicon Surfaces Irradiated by Cluster Ion Impacts”, Nuclear Instruments and Methods in Physics Research B: Beam Interactions with Materials and Atoms, Vol. 202, April 2003, Pages 261-268.

J.O. Chu, L.P. Allen, W. Skinner, J. Hautala, T.G. Tetreault, R. MacCrimmon, C. Santeufemio, E. Degenkolb, D.B. Fenner, “SiGe-on-Insulator thinning and uniformity improvement using a fluoride GCIB process”, Proc. of the 2003 IEEE International SOI Conference (Newport Beach, CA, September 29th-Oct. 2nd). P.45.

S. Gallis, H. Efstathiadis, L.P. Allen, V. DiFillipo, B.Zide, “Gas Cluster Ion Beam Processing of Thermal Chemical Vapor Deposited SiC Films for Nanostructure Fabrication”, presented at the 47th International Conf. of Electron, Ion, Photon Beam Technology for Nanofabrication, (May 27th-30th, 2003, Tampa, FL), http://www.eipbn.org .Paper #5B5.

X. Li, W.D. Goodhue, C. Santeufemio, T.G. Tetreault, R. MacCrimmon, L.P. Allenm D. Bliss, K. Krishnaswami, C. Sung, “Gas Cluster Ion Beam Processing of GaSb Wafers for Surface and Sub-Surface Damage Reduction”, Applied Surface Science, Vol 18 (1) 30 September 2003, pp 251-258.

I. Yamada, N. Toyoda, J. Matsuo, L.P. Allen, “Cluster Ion Beam Process Technology”, Proc. of the Electrochemical Society Spring Meeting, (April 2003), #ECS2003_887

X. Li, B. Kang, M.C. Ospina, X. Liu, W. Goodhue, T.G. Tetreault, L.P. Allen, D. Bliss, and C. Sung, “Nanoscale Modification of the Surface Oxide of GaSb Substrates for Device Applications”, 2002 Materials Research Society Fall Meeting, Symposium I: Nanomaterials for Structural Applications, in print.

L.P. Allen, Z. Insepov, C. Santeufemio, D.B. Fenner, W. Brooks, K.S. Jones, and I. Yamada, “Craters on Silicon Surfaces Created by Gas Cluster Ion Impacts: Experiment and MD-Modeling”, Journal of Applied Physics, Vol. 92, No. 7, 1 October 2002, pp3671-3678.

L.P. Allen, S. Caliendo, N. Hofmeester, E. Harrington, M. Walsh, M. Tabat, T.G. Tetreault, E. Degenkolb, C. Santeufemio and W. Skinner, “GCIB etching and smoothing of SOI for FD applications”, 2002 IEEE International SOI Conference, Williamsburg, VA (October 7-11, 2002), p.192.

L.P. Allen, T.G. Tetreault, C. Santeufemio, M. Tabat, X. Li, W. Goodhue, C. Sung, D. Bliss, K.S. Jones, ” Gas Cluster Ion Beam Smoothing of CMP GaSb(100) Substrates”, International Conference on Alternative Substrate Technology, (September 14-17, 2002, Cancun, Mexico) p. 34. http://ncsr.csci-va.com/?meetings.asp and Journal of Electronic Materials, Vol. 32, No. 8, 2003, p 842.

Z. Insepov, N. Toyoda, I. Yamada, L.P. Allen, C.L. Santeufemio, “Computer Modeling and Electron Microscopy of Silicon Surfaces Irradiated by Cluster Ion Impacts”, 2002 14th International Conference on Ion Implantation Technology Proceedings (Taos, New Mexico, USA) 22-27 September 2002, eds. B. Brown, T. L. Alford, M. Nastasi, M.C. Vella, p. 571-574.

M.S. Hatzistergos, H. Efstathiadis, E. Lifshin, A.E. Kaloyeros, J.L. Reeves, V. Selvamanickam, L.P.Allen, and R. MacCrimmon, “Microstructural and Electrical Characterization of Thick YCBO Films”, Session M.2.8: Thin Film Characterization Techniques, 2002 Applied Superconductivity Conference, August 4-9, 2002, Houston, Texas, IEEE Transactions on Superconductivity, in print.

L.P. Allen, D.B. Fenner, C. Santeufemio, W. Brooks, J. Hautala, and Y. Shao, “Nano-scale surface texture by impact of accelerated condensed-gas nanoparticles”, in Complex Mediums III: Beyond Linear Isotropic Dielectrics, SPIE International Symposium on Optical Science and Technology, July 7-11, 2002, (Seattle, WA), Volume 4806, p. 225.

X. Li, L.P. Allen, C. Santeufemio, W. Goodhue, and C. Sung, “Nanocharacterization of GaSb Substrate Surface by TEM/AFM”, Microsc. Microanal. 8 (Suppl. 2), 2002, 1258CD.

Z. Insepov, L.P. Allen, C. Santeufemio, K.S. Jones, and I. Yamada, “Computer Modeling and Electron Microscopy of Silicon Surfaces Irradiated by Cluster Ion Impacts”, 6th International Conference on Computer Simulation of Radiation Effects in Solids (COSIRES 2002), June 23-27, 2002, Dresden, Germany, Paper ID: O25.

X. Li, C. Santeufemio, T. Tetreault, L.P. Allen, R. MacCrimmon, W. Goodhue and C. Sung, “Surface Modification of Gallium Antimonide by Gas Cluster Ion Beam Processes”, New England Society for Microscopy, Nineteenth Annual Spring Symposium, Session II: Materials Sciences, Marine Biological laboratories, Woods Hole, MA, May 10-11, 2002. Second Prize Conference Paper.

D.B. Fenner, R.P. Torti, L.P. Allen, N. Toyoda, A.R. Kirkpatrick, J.A. Greer, V. DiFilippo, and J. Hautala, “Etching and surface smoothing with gas-cluster ion beams,” Proceedings of the MRS, 585 27 (2001)

L.P. Allen, Invited Plenary Session Speaker, “Silicon-on-Insulator Material Technology”, Proc. of the 2001 IEEE International SOI Conference (Durango, CO), IEEE EDS New Jersey, p.5. http://www.ieee.org/services/infoadvantage.html

L.P. Allen, J. Hautala, C. Santeufemio, W. Brooks, D. Fenner, T. Lucking, and M.Liu, “Gas Cluster Ion Beam Processing of SOI Wafers for Improved Gate Oxide Integrity”, Proc. of the 2001 IEEE International SOI Conference (Durango, CO), p.35. http://www.ieee.org/services/infoadvantage.html

M.J. Anc, L.P. Allen, M.L. Alles, R.P. Dolan, S.T. Liu, J.G. Sullwold, M. Gostein, M. Banet, “Study Relevance of the SIMOX Defect Type on Yield of Radiation-Tolerant Device Test Structures”, Proc. of the 2001 IEEE International SOI Conference, *IEEE http://www.ieee.org/services/infoadvantage.html, p.129.

L.P. Allen (Invited Speaker), K.S. Jones, C. Santeufemio, W. Brooks, D.B. Fenner, and J. Hautala, “Sub-surface crater evaluation of Argon and Oxygen Gas Cluster Ion Beam Impacts into Si Substrates”, Proceedings of the Near Surface Effects Conference, August 5-10, 2001, Kodiak Island, Alaska, (Office of Naval Research, Arlington, VA), p.16.
L.P. Allen, D.B. Fenner, C. Santeufemio, W. Brooks, E. Degenkolb, V. Difilippo, J. Hautala, A. Kirkpatrick, “Surface Processing by Gas Cluster Ion Beam Technology”, Journal of Electronic Materials, Vol. 30, No. 7, 2001, 829.
Y.Tan, B. Johnson, S. Seraphin, J. Jiao, M.J. Anc, L.P. Allen, “Effect of
Annealing Conditions on the Formation of Low-Dose SIMOX Structures Implanted
at 190 keV”, J. Mat. Sc. Mat. Electronics, 12, 537-542 (2001).
M.J. Anc, M. Gostein, M. Banet, L.P. Allen, “Non-destructive impulsive stimulated thermal scattering (ISTS) analysis of SOI defects in SIMOX”, SOI Technology and Devices X, Tthe Electrochemical Society Spring Conference (May, 2001, Washington, D.C.), p. 51, acct@electrochem.org
L. P. Allen (Invited Speaker), “Gas Cluster Ion Beam Processing of Materials”, Portland Area Semiconductor Consortium Series, May 2001, Graduate Research Institute, Beaverton, Oregon. Videotaped to Portland Area Semiconductor Community.

V. DiFilippo, A. Saigal, D. B. Fenner, L.P. Allen, J.K. Hirvonen, J.A. Bennett, L.C. Feldman, “Polishing of SiC with Gas Cluster Ion Beams”, presented at American Physical Society March 2001 Spring Meeting (March 12-16, 2001, Seattle, WA), abstract in Bull. Amer. Phys. Soc. 46, p. 380 (2001).

L.P. Allen, M. Mack, C. Santeufemio, E. Degenkolb, W. Brooks, J. Hautala, D.B. Fenner, A. Kirkpatrick, “Surface Modification of Thin Films by Gas Cluster Ion Beam Processing”, presented at the 2001 Annual Meeting of The Minerals, Metals and Materials Society (New Orleans, February 11-16, 2001).
V. DiFilippo, A. Saigal, D. B. Fenner, L.P. Allen, J.K. Hirvonen, “Gas Cluster Ion Beam Smoothing of Silicon Carbide”, presented at The International Conference on Processing & Manufacturing of Advanced Materials (THERMEC), December 4-8, 2000, Las Vegas, NV)
L. Stelmack, L.P. Allen, V. DiFilippo, J.A. Greer, D.B. Fenner, R. Chandonnet, J. Hautula, A. Kirkpatrick, “Super-smooth Neutron Optical Surfaces by Gas Cluster Ion Beam Processing”, Paper #SS2-WeM5, American Vacuum Society, 47th International Symposium on Vacuum, Thin Films, Surfaces/Interfaces, and Processing. October 2-6, 2000, Boston, MA. J. Vac. Sci. & Technol. A, Vol. 19, pp. 1207-1212 (Jul/Aug 2001).

D.B. Fenner, J. Hautala, L.P. Allen, J.A. Greer, W.A. Skinner, A. Al-Jibouri, J.I. Budnick and K.S. Jones, “Surface Processing with Gas Cluster Ions to Improve GMR Films”, Paper #MI-FrM10, American Vacuum Society, 47th International Symposium on Vacuum, Thin Films, Surfaces/Interfaces, and Processing. October 2-6, 2000, Boston, MA. J. Vac. Sci. & Technol. A, Vol. 19, pp. 1207-1212 (Jul/Aug 2001).

D.B. Fenner, J. Hautula, L.P. Allen, J.A. Greer, W.J. Skinner, J.I. Budnick, “Smoothing thin films with gas cluster ion beams”, , “Smoothing Thin Films with Gas Cluster Ion Beams”, Materials Research Society Symp. Proc., Vol. 614, “Magnetic Materials and Processing”, pp. F10.3.1-6 (2000).

L.P. Allen, B.F. Cordts, R.P. Dolan, J. Blake, M.J. Anc, M.L. Alles, H.L. Hughes P. J. McMarr, and B. Mrstik, “Radiation Hard SIMOX Substrate Development for
Advanced Electronics Applications”, Government Microcircuit Applications Conf. (GOMAC), March 20-24, 2000 (Anaheim, CA), p.348.

APS “R.F. BUNSHAH” BEST PAPER AWARD: J.A. Greer, D.B. Fenner, J. Hautala, L.P. Allen, V. DiFilippo, N. Toyoda, I. Yamada, J. Matsuo, E. Minami, H. Katsumata, “Etching, smoothing, and deposition with gas cluster ion beam technology”, Surface and Coatings Technology Vol. 133-134 (1-3) (2000) pp. 273-282

N. Toyoda, K.K. Lee, H.-C. Luan, D.R. Lim, A. Agarwal, K. Wada, L.C. Kimerling, L.P. Allen, D.B. Fenner, and A.R. Kirkpatrick, “Surface smoothing of polycrystalline Si waveguides with gas-cluster ion beams,” Proceedings of the MRS, 597 51 (2001)

D.B. Fenner, R.P. Torti, L.P. Allen, N. Toyoda, A.R. Kirkpatrick, J.A. Greer, V. DiFilippo and J. Hautala, “Etching and Surface Smoothing with Gas-Cluster Ion Beams”, Materials Research Society Symp. Proc., Vol. 585, pp. 27-32 (2000).

L.P. Allen, D.B. Fenner, W. J. Skinner, R. Chandonnet, S.E. Deziel, R.P. Torti, N. Toyoda, “SIMOX SOI Surface Smoothing for Gate Oxide Integrity and Reliability”, Proc. of the 1999 IEEE International SOI Conf., (Sonoma, CA Oct. 4-7, 1999) p.116.

W. Skinner, D. Fenner, L. Allen, “Clusters Extend Ion-Beam Technology”, Vacuum Solutions, (March/April 1999), p. 29-32.

W.C. Jenkins, R.K. Lawrence, S.T. Liu, L.P. Allen, M.J. Anc, and R.P. Dolan, H.L. Hughes, and P.J. McMarr, “Radiation Hardening Ibis ADVANTOX 190 SOI Starting Wafers”, 35th Nuclear and Space Radiation Effects Conference, (July 20-24, 1998, Newport Beach, CA), Isolation Technologies Session. and accepted for IEEE Transactions on Nuclear Science, December 1998.

M. Banet, L.P. Allen, K.A. Nelson, “Non-Contact Acoustic Wave Metrology of SOI Substrates” Proceedings of the 1998 IEEE International SOI Conference, (Hutchinson Island, FL, Oct. 5-8, 1998), p.45.

L.P. Allen, M.J. Anc, B. Dolan, J. Jiao, B. Guss, S. Seraphin, S.T. Liu, W. Jenkins, “Buried Oxide Densification for Low Power, Low Voltage CMOS Applications”, Proceedings of the 1998 IEEE International SOI Conference, (Hutchinson Island, FL, Oct. 5-8, 1998), p.39.

S. Charpenay, P.A. Rosenthal, P.R. Solomon, J. Xu, V. Yakovlev, L.P. Allen, M.W Brandt, and B. F. Cordts, “FT-IR Reflectance Spectroscopy Control of SIMOX Structures”, Proceedings of the 1998 IEEE International SOI Conference, (Hutchinson Island, FL, Oct. 5-8, 1998), p.43.

S.T. Liu, L.P. Allen, M.J. Anc, H.L. Hughes, P.J. McMarr, R.K.Lawrence, “Reducing Radiation Induced Back-channel Threshold Voltage Shifts in Partially-depleted SIMOX Devices by Using ADVANTOX Substrates”, IEEE Transactions on Nuclear Science, Vol. 44, No. 6, December 1997, p.2101 and presented at the 1997 IEEE Nuclear and Space Radiation Effects Conference (Snowmass, CO, June 21-25, 1997).

S.T. Liu, H. Hughes, W. Jenkins, and L.P. Allen, “ADVANTOX more radiation resistant than full dose SIMOX”, Proceedings of the 1997 IEEE International SOI Conference, (Fish Camp, CA, Oct. 6-9, 1997), p. 148.

M. Alles, R. Dolan, M. Anc, L.P. Allen, B. Cordts, “Analysis of ADVANTOX thin BOX SIMOX SOI material”, Proceedings of the 1997 IEEE International SOI Conference, (Fish Camp, CA, Oct. 6-9, 1997), p. 10.

R. Datta, L.P. Allen, R. Chandonnet, M. Farley, and K.S. Jones, “Effect of varying implant energy and dose on the SIMOX microstructure”, Proceedings of the 1997 IEEE International SOI Conference, (Fish Camp, CA, Oct. 6-9, 1997), p.42.

M.J. Anc, L.P. Allen, P.J.; McMarr, B. Mrstik, H.L. Hughes, and C.P. Brothers, “Analysis of Structural and Electrical Characteristics of Low Dose SIMOX”, 1997 8th International Symposium on silicon-on-insulator Technology and Devices, eds. K. Izumi, S. Cristoloveanu, S. Wilson, Vol. 97-23, (Paris, France, August 31-September 4, 1997), p.143. and submitted to J. Electrochem. Soc.

R.J. Lambert, T.N. Bhar, R.K. Lawrence, H.L. Hughes, and L.P. Allen, “Measurement of hole traps in SIMOX oxide by avalanche injection”, Electronics Letters, 3rd July 1997, Vol. 33, No. 14, 1264-5.

L.P. Allen, M.L. Alles, R.P. Dolan, H.L. Hughes, and P.J. McMarr, “Thin BOX SIMOX SOI Substrates for Radiation Tolerent Advanced Electronics”, Microelectronic Engineering. 36(1997), p. 383-386.

R. Datta, V. Krishnamoorthy, L.P. Allen, R. Chandonnet, M. Farley, and K.S. Jones, “Effect of Oxygen Dose Variation on the SIMOX Microstructure” Eds. W.L. Warren, R.A. Devine, M. Matsumura, S. Cristoloveanu, Y. Homma, and J. Kanicki, Mat. Res. Soc. Symp. Proc. Vol. 446 (1997 Materials Research Society), p.207.

J.U. Yoon, G.N. Kim, J-H.Y. Krska, L.P. Allen, J.E. Chung, K. Goodson, and K. Nauka, “Correlation of Electrical and Physical Properties of SIMOX BOX Effected by Various Implantation Parameters”, Eds. W.L. Warren, R.A. Devine, M. Matsumura, S. Cristoloveanu, Y. Homma, and J. Kanicki, Mat. Res. Soc. Symp. Proc. Vol. 446 (1997 Materials Research Society), p.193.

L.P. Allen, M. Farley, R.P. Dolan, R. Datta, and K.S. Jones, “Independent implant parameter effects on SIMOX SOI dislocation formation”, Materials Science & Engineering B., B46 (1997), p.8-13.

Y-S Chang, S.S. Li, R. Datta, and L. P. Allen, “Correlation of Implantation Defects with Interface Recombination Velocities and Carrier Lifetimes in Annealed SIMOX SOI Materials by Using a Contactless Optical Modulation Technique”, Solid State Electronics. Vol. 41, No.8, pp.1189-1198, 1997.

L.P. Allen, M. Farley, K. Purser, G. Ryding, T. Smick, “Modified In-Situ Rutherford Design and Implementation for Early SIMOX SOI Metallic Screening”, Nuc. Instr. and Meth. in Phys. Res. B, 118 (1996) 782.

R. Datta, V. Krishnamoorthy, L.P. Allen, R. Chardonnet, M. Farley and K.S. Jones, “Effect of Oxygen Dose Variation on the SIMOX Microstructure,” Mat. Res. Soc. Symp. Proc., 446, 207-212, 1996.

L.P. Allen, M. Farley, R. Datta, K.S. Jones, V. Krishnamoorthy, J.Y. Krsak, J.U. Yoon, and J.E. Chung, “Fundamental Material Analysis and SIMOX Improvement as a Function of Independent Implant Parameter Control”, Proceedings of the 1996 IEEE International SOI Conference, (Sanibel Island, FL, Sept. 31-Oct. 4, 1996), p. 32.

M.J. Anc, L.P. Allen, R.P. Dolan, B.F. Cordts, G. Ryding, M.A. Mendicino, X. Shi, W. Maszara, R. Dockerty, P.K. Vasudev, P. Roitman, “Characterization of Low Dose SIMOX for Low Power Electronics”, Proceedings of the 1996 IEEE International SOI Conference, (Sanibel Island, FL, Sept. 31-Oct. 4, 1996), p. 54.

M. Farley, L.P. Allen, T.H. Smick, G. Ryding, and K. Purser, “In-Situ Rutherford Back Scattering for Implantation Systems”, Proceedings of the 11th International Conference on Ion Implant Technology, Editors, E. Ishida, S. Banerjee, S. Mehta, T.C. Smith, M. Current, L. Larson, A. Tasch,(June 16-21, 1996 Austin, TX), p.127.

G. Ryding, T.H. Smick, M. Farley, B.F. Cordts, R.P. Dolan, L.P. Allen, B. Matthews, W. Wray, B. Amundsen, M.J. Anc, “The Ibis 1000 Production Implanter”, Proceedings of the 11th International Conference on Ion Implant Technology, Editors, E. Ishida, S. Banerjee, S. Mehta, T.C. Smith, M. Current, L. Larson, A. Tasch,(June 16-21, 1996, Austin, TX), p.436.

R.Datta, V. Krishnamoorthy, K.S. Jones, L.P. Allen, and M. Farley, “Microstructural changes in SIMOX as a function of varying implantation parameters”, Proc. of the European Materials Research Society, Symposium A, (June 4-6, 1996, Strasbourg, France)

L.P. Allen, M.J. Anc, M. Duffy, J.H. Parechanian, and J.H. Yap Krska, “Electrochemical Analysis of SIMOX Buried Oxides”, Proceedings of the 1996 7th International Symposium on silicon-on-insulator Technology and Devices, (Los Angeles, CA, May 5-10, 1996), p.18.

L.P. Allen, T.H. Smick, and G. Ryding, “SIMOX Research, Development, and Manufacturing”, Journal of Electronic Mat., Vol. 25, No. 1, 1996, p.93.

L.P. Allen, A. Genis, C. Jacobs, S. M. Allen, M. Snorrason, G. Zacharias, “Automatic Statistical Determination of Dislocation Density in Production SOI Substrates”, 1995 IEEE International SOI Conference Proceedings, (Tucson, AZ, Oct. 3-5, 1995), p. 32.

R.J. Lambert, T.N. Bahr, H.L. Hughes, and L.P. Allen, “Avalanche Hole Injection into SIMOX Oxide”, 1995 IEEE International SOI Conference Proceedings, (Tucson, AZ, Oct. 3-5, 1995), p. 120.

P. Karn, A. Genis, C. Jacobs, and L.P. Allen, “Effect of Cleaning on Metallic Contamination and Surface Roughness”, Proceedings of the Electrochemical Society Fall Meeting, (Miami, FL, October 9-14, 1994).

C. Jacobs, A. Genis, L.P. Allen, and P. Roitman, “Effect of Annealing on Interface Roughness of SIMOX”, Proceedings of the IEEE International SOI Conference, (October 4-7, 1994, Nantucket, MA), p.49.

M. Twigg, H.L. Hughes, P. Roitman, and L.P. Allen, “Measurement of Low Defect Densities in SIMOX using TEM”, Proceedings of the IEEE International SOI Conference, (October 4-7, 1994, Nantucket, MA), p.85.

S.W. Crowder, P.B. Griffin, C.J. Hsieh, G.Y. Wei, J.D. Plummer, and L.P. Allen, “Oxidation Enhanced Dopant Diffusion in Separation by Implantation of Oxygen Silicon-on-Insulator”, Appl. Phys. Lett., 64 (24), 13 June 1994, p.3264.

M. Alles, W.A. Krull, and L.P. Allen, “Status of Thin Buried Oxide SIMOX”, Electrochemical Society Spring Meeting, (San Fransisco, May 1994), ed. S. Cristoloveanu, Volume 94-11, p. 459.

M. Alles, W.A. Krull, and L.P. Allen, “Implications of Thin Buried Oxide for SIMOX Circuit Performance”, Extended Abstracts of the Electrochemical Society Spring Meeting, (San Fransisco, May 1994), ed. S. Cristoloveanu, Volume 94-1, p. 882.

L.P. Allen, B.F. Cordts, and W.A. Krull, “Independent Control of Wafer Temperature and Beam Current on SIMOX Material Quality”, Proceedings of the 1993 IEEE International SOI Conference, (Oct. 5-7, 1993, Palm Springs, CA), p.18.

M.E. Twigg, L.P. Allen, B.J. Mrstik, L.T. Ardis, “Characterization of SIMOX Material with Channeled and Unchanneled Oxygen Implantation”, Proceedings of the 1993 IEEE International SOI Conference, (Oct. 5-7, 1993, Palm Springs, CA), p. 50.

M.J. Anc, B.F. Cordts, L.P. Allen, W.A. Krull and M.A. Guerra, “Crystallographic Effects in Implantation of Oxygen for SIMOX”, Proceedings of the 1993 IEEE International SOI Conference, (Oct. 5-7, 1993, Palm Springs, CA), p. 46.

L.P. Allen, W.A. Krull, and B. Dolan, “Characterization of Thin (100 mm) SIMOX SOI”, presented at the 35th Electronic Materials Conference, (Santa Barbara, CA), June 23-25, 1993.

L.P. Allen, A. Genis, B. Dolan, and W.A. Krull “Synthesis, Modelling, and Characterization of Thin Buried Oxide SIMOX”, presented at The Metallurgical Society Annual Meeting (Denver, Colorado, February 1993).

B.F. Cordts, M. Anc, and L.P. Allen, “Impurity Profiles of SIMOX Using Total X-ray Fluorescence”, presented at Materials Research Society Fall Conference Proceedings (Boston, MA, December, 1992).

L.P. Allen, M. Anc, A. Genis, W.A. Krull, J.H. Yap, and J.E. Chung, “Structural and Electrical Analysis of SIMOX Buried Oxides”, presented at Materials Research Society Fall Conference Proceedings (Boston, MA, December, 1992).

L.P. Allen, A. Genis, and W. Krull, “Statistical Analysis of Silicon Defect Densities in SIMOX”, Proceedings of the IEEE SOI Technology Conference, Pointe Vedre, FL, Oct.3-5, 1992, p.44.

L.P. Allen, A. Genis, B. Dolan, and W.A. Krull, “Electrolytic Analysis of Oxide Leakage in SIMOX Material” Proceedings of the IEEE SOI Technology Conference, Pointe Vedre, FL, Oct.3-5, 1992, p.22.

L.P. Allen, N.K. Annamalai, S.K. Liu, and J. Sawyer, “Radiation Response of Thin Buried Oxide SIMOX SOI”, Nuclear and Space Radiation Effects Conference (NSREC) presentation I-4, (New Orleans, LA, July 17, 1992).

S.T. Liu and L.P. Allen, “Back Channel Uniformity of Thin SIMOX Wafers”, IEEE Transactions on Nuclear Science, Vol.38, No.6, December 1991, p.1271.

E. Cortisi, M.K. El-Ghor, H.Hosak, L.P. Allen, P. Roitman, and S.J. Krause, “Evaluation of Secco Etch Technique for Determination of Dislocation Densities in SIMOX Wafers”, Proceedings of the IEEE SOI Technology Conference, Vail, Co, Oct.3-5, 1991, p.118.

L.P. Allen, M.J. Anc, B.F. Cordts, G. Campisi, and P.M. Sandow, “The Effect of TCA on SIMOX Material Quality and Device Performance”, Proceedings of the IEEE SOI Technology Conference, Vail, Co, Oct.3-5, 1991.

W.A. Krull, R.D. Cherne, L.P. Allen, and D. Bain, “The Effect of Substrate Leakage on the Radiation Response of SIMOX Transistors and Circuits”, 1991 IEEE Annual Conference on Nuclear and Space Radiation Effects (NSREC), San Diego, Ca., July 15-19,1991.

P.M. Sandow, L.P. Allen, B. Cordts, M. Anc, R. Dolan and S.K. Hahn, “Characterization of Low Defect Density SIMOX Material”, Silicon-on-Insulator Technology and Devices, Proc. of The Electrochemical Society Spring Meeting, Vol 91-1, Washington, D.C., May 5-10, 1991.

E.P. Kvam, J. Washburn, L.P. Allen and P.M. Zavracky, “Materials Study of Silicon-on-Insulator Material by TEM”, Journal of Electronic Materials, Vol. 20, No. 2, 1991, p.151.

Ioannis N Miaoulis, Lisa P. Allen, “Thermal Analysis of Thin Film Zone Melting Recrystallization”, TMS Annual Proceedings on Recrystallization, , (Sydney, Australia, January 1990).

L.P. Allen, J.A. Knapp. P.M. Zavracky, and T.P. Ford, “Examination of ISETM SOI Material Purity”, 1989 IEEE SOS/SOI Workshop, Stateline, Nevada, Oct. 3-5, 1989.

D.P. Vu, M.J. Boden, W.R. Henderson, N.K. Cheong, L. Pourcin, L.P. Allen, and P.M. Zavracky, “High Temperature Operation of ISETM Devices and Circuits”, 1989 IEEE SOS/SOI Workshop, Stateline, Nevada, Oct. 3-5, 1989.

L.P. Allen, M.W. Batty, T.E. Jersey, P.M. Zavracky, D.K. Bowen, D.Gorden-Smith, and C.R. Thomas, “Crystallinity of Isolated Silicon Epitaxy SOI Layers”, Chemistry and Defects in Semiconductor Heterostructures, Materials Research Society Symposium Proceedings, M. Kawabe, T.D. Sands, E.R. Weber, and R.S. Williams, eds., Vol. 148, p.409.

P.M. Zavracky, D.P. Vu, L.P. Allen, W. Henderson, T.E. Jersey, M.W. Batty, 1988 IEEE SOS/SOI Workshop, St. Simons Island, Georgia, Oct. 3-5, 1988.

L.P. Allen, D.P. Vu, P.M. Zavracky, W.R. Henderson, T.E. Jersey, J.C.C. Fan, J. Narayan, “Characterization of Defects in Zone Melt Recrystallized SOI Material”, Proceedings of the International Society for Optical Engineering, SPIE Vol. 945 Advanced Processing of Semiconductor Devices II (1988), pp. 126-130.

D.P. Vu, L.P. Allen, W.R. Henderson, P.M Zavracky, “SOI Wafers by Zone Melting Recrystallization”, Proceedings of the European SOI Workshop, Meylan, France, March 1988, (CNET-CNS B.P. 98, 38243, Meylan-Cedex, France), p. A-03.

P.M. Zavracky, D.P. Vu, L.P. Allen, W. Henderson, H. Gukel, J.J. Sniegowski, T.P. Ford, and J.C.C. Fan, “Large Diameter SOI Wafers by Zone Melting Recrystallization” in Silicon-on-Insulator Buried Metals in Semiconductors, Materials Research Society Symposium Proc., vol 107, J.C. Sturm, C.K. Chen, L. Pfeiffer, and P.L.F. Hemment eds., pp. 213-219.

Z. Liliental-Weber, E.R. Weber, L. Parechanian-Allen, and J. Washburn, “On the Use of Convergent Beam Electron Diffraction for Identification by Antiphase Boundaries in GaAs Grown on Si”, Ultramicroscopy 26 (1988), pp. 59-64.

L.P. Allen, E.R. Weber, J. Washburn, Y.C. Pao, and A.G. Elliot, “Characterization of Surface Faceting on (110) GaAs/GaAs grown by MBE”, Journal of Crystal Growth, 87, (1988), p. 193.

L.T.P. Allen, E.R. Weber, J. Washburn, and Y.C. Pao, in Characterization of Defects in Materials, R.W. Siegel Et. al., eds., Materials Research Society Symposia Proceedings, 82 (Pittsburgh, PA, 1987), P. 487.

Y.C. Pao, N. Gabriel, D. Liu, J. Harris, L.T.P. Allen, E.R. Weber, “Device and Material Characterization of Molecular Beam Epitaxial (110) GaAs/AlGaAs”, Journal of Electronic Materials (Vol. 17, 1988).

L.T.P. Allen, E.R. Weber, J. Washburn, and Y.c. Pao, “Device Quality Growth and Characterization of (110) GaAs grown by MBE”, Appl. Phys. Lett., 51(9), 1987, p.670.

Z. Liliental-Weber and L. Parechanian-Allen, “Determination of As and Ga Planes by Convergent Beam Electron Diffraction”, Appl. Phys. Lett. 49 (18), 1986, p. 1190.

L. Parechanian, E.R. Weber, and T.L. Hierl in Microscopic Identification of Electronic Defects in Semiconductors, N.M. Johnson et. al., eds., Materials Research Society Symposia Proceedings, 46 (Pittsburgh, PA, 1985), p.391.

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